Method of fabricating crown capacitor

Details Method of fabricating crown capacitor Method of fabricating crown capacitor

1999-12-10

2000-10-10

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438255, 438256, 438396, H01L 218242

Patent

active

061301280

ABSTRACT:
A method of fabricating a crown capacitor comprising first providing a substrate having a transistor, constituted by at least one diffused region, formed thereon and overlaid by a first insulating layer. Bit lines are formed in the first insulating layer. A first masking layer and a second insulating layer are sequentially formed over the substrate. The second insulating layer, the first masking layer and the first insulating layer are patterned to form a contact hole that exposes the diffused region. A second masking layer is conformally formed and etched back to form masking spacers on the sidewalls of the contact hole. A third insulating layer is formed over the substrate, wherein the third insulating layer fills the contact hole. The second insulating layer and the third insulating layer are selectively removed to expose portions of the first masking layer, the masking spacers and the diffusion areas. A conductive layer is conformally formed over the portions of the first masking layer, the masking spacers and the diffusion areas. A fourth insulating layer is formed over the conductive layer. The fourth insulating layer and the conductive layer are planarized to the third insulating layer. The fourth insulating layer, the third insulating layer, and the second insulating layer are removed to expose the conductive layer as a bottom electrode. A capacitor dielectric layer and a top electrode are sequentially formed on the bottom electrode.

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