Method of fabricating CMOS transistor

Details Method of fabricating CMOS transistor Method of fabricating CMOS transistor

2009-10-26

2011-12-20

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S528000, C438S530000, C257SE21335, C257SE21619, C257SE21632

Reexamination Certificate

active

08080454

ABSTRACT:
A method of fabricating a CMOS transistor includes forming strained channels by re-crystallized amorphous polysilicon with the tensile film or the compressive film during annealing. C or Ge ions are optionally used to form solid-phase epitaxy to amplify the stress in the strained channel. Therefore, the charge carrier mobility in a CMOS transistor is improved.

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