Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-20
2009-08-11
Wojciechowicz, Edward (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S275000, C257S351000
Reexamination Certificate
active
07572690
ABSTRACT:
A method of fabricating a CMOS thin film transistor (TFT) and a CMOS TFT fabricated using the method involve provision of a substrate having a first region and a second region. A first semiconductor layer and a second semiconductor layer are formed on the first and second regions, respectively. A gate insulating layer having a first portion overlying end portions of the first semiconductor layer, and a second portion overlying end portions of the second semiconductor layer and having a thickness larger than that of the first portion, is formed on the semiconductor layers. An ion doping mask pattern is formed on the gate insulating layer. First impurities are doped in end portions of the first semiconductor layer using the ion doping mask pattern as a mask, and second impurities having a conductivity type different from that of the first impurities are doped in end portions of the second semiconductor layer. As a result, it is possible to reduce the number of masks, and to simplify the processes required for manufacture of the CMOS TFT.
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Bushnell , Esq. Robert E.
Samsung Mobile Display Co., Ltd.
Wojciechowicz Edward
LandOfFree
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