Method of fabricating CMOS inverter and integrated circuits...

Details Method of fabricating CMOS inverter and integrated circuits... Method of fabricating CMOS inverter and integrated circuits...

2005-04-19

2005-04-19

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S455000

Reexamination Certificate

active

06881632

ABSTRACT:
A method of fabricating a CMOS inverter including providing a heterostructure having a Si substrate, a relaxed Si1-xGexlayer on the Si substrate, and a strained surface layer on said relaxed Si1-xGexlayer; and integrating a pMOSFET and an nMOSFET in said heterostructure, wherein the channel of said pMOSFET and the channel of the nMOSFET are formed in the strained surface layer. Another embodiment provides a method of fabricating an integrated circuit including providing a heterostructure having a Si substrate, a relaxed Si1-xGexlayer on the Si substrate, and a strained layer on the relaxed Si1-xGexlayer; and forming a p transistor and an n transistor in the heterostructure, wherein the strained layer comprises the channel of the n transistor and the p transistor, and the n transistor and the p transistor are interconnected in a CMOS circuit.

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