Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-15
2006-08-15
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S213000, C977S847000
Reexamination Certificate
active
07091096
ABSTRACT:
The invention relates to a method of fabricating a structure with field-effect transistors each comprising a source electrode, a drain electrode, a channel extending between the source and drain electrodes and at least one gate electrode associated with the channel for controlling the conductance of the channel, wherein the channel comprises one or more semiconducting single-wall carbon nanotubes. The method includes the steps ofa) depositing a plurality of single-wall carbon nanotubes on a substrate, the carbon nanotubes including a mixture of metallic carbon nanotubes and semiconducting carbon nanotubes,b) providing before or after step a) source and drain electrodes on the substrate so that one or more carbon nanotubes extend between the source and drain electrodes,c) applying a variable gate voltage to switch off the semiconducting tubes extending between the source and drain electrodes,d) wetting the surface of the structure including the transistors with a chemical to achieve a chemical bond between a radical supplied by the chemical and some carbon atoms of the metallic nanotubes, whereby these metallic nanotubes become non-conductive.
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Balasubramanian Kannan
Burghard Marko
Kern Klaus
Coleman W. David
Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
Townsend and Townsend and Crew
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