Method of fabricating capacitor with a ring trench

Details Method of fabricating capacitor with a ring trench Method of fabricating capacitor with a ring trench

1999-03-16

2000-10-10

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438634, H01L 218242

Patent

active

061301256

ABSTRACT:
A method of fabricating a capacitor is described. A dielectric layer is formed on a substrate. A node contact opening is formed in the dielectric layer to expose a portion of the substrate. A conductive layer is formed on the dielectric layer to cover the node contact opening. A ring trench is formed in the conductive layer above the node contact opening. An oxide layer is formed to fill the ring trench. An etching stop layer is formed to cover the oxide layer, the conductive layer encircled by the oxide layer, and a portion of the oxide layer beside the oxide layer. The etching stop layer defines a capacitor area. The conductive layer exposed by the etching stop layer is removed until the dielectric layer is exposed. The oxide layer and the etching stop layer are removed to expose the remaining conductive layer. A capacitor dielectric layer and a top electrode are formed in sequence to cover the remaining conductive layer.

REFERENCES:
patent: 5759888 (1998-06-01), Wang et al.
patent: 5909620 (1999-06-01), Wu
patent: 6025246 (2000-02-01), Kim
patent: 6027981 (1998-06-01), Wu

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