Method of fabricating capacitor of semiconductor memory device

Details Method of fabricating capacitor of semiconductor memory device Method of fabricating capacitor of semiconductor memory device

1996-10-11

1998-07-14

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, H01L 218292

Patent

active

057803340

ABSTRACT:
A method of fabricating a capacitor of a semiconductor memory device includes the steps of: forming an interlevel insulating layer on a semiconductor substrate on which the capacitor will be formed, selectively etching a portion of the interlevel insulating layer placed on a capacitor forming portion to form a capacitor node hole, and forming a first temporary layer on the interlevel insulating layer, including a portion of the interlevel insulating layer in which the capacitor node hole is formed; forming a contact hole beneath the capacitor node hole in a capacitor contact portion; forming a conductive layer on the first temporary layer to bury the contact hole and the capacitor node hole, and then forming a second temporary layer on the conductive layer; etching back the second temporary layer through anisotropic etching process to expose the conductive layer, and to simultaneously form a temporary pillar layer inside the capacitor node hole, the temporary pillar layer being substantially surrounded by the conductive layer; removing a portion of the conductive layer placed on a portion other than the capacitor forming portion, to form a first capacitor electrode and to expose at least a portion of the first temporary layer; and removing remaining portions of the first and second temporary layers to expose an upper portion of the first capacitor electrode, forming a dielectric layer on a surface of the first capacitor electrode, and forming a second capacitor electrode on a surface of the dielectric layer.

REFERENCES:
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5468671 (1995-11-01), Ryou
patent: 5501998 (1996-03-01), Chen
patent: 5595929 (1997-01-01), Tseng

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