Method of fabricating capacitor of semiconductor device

Details Method of fabricating capacitor of semiconductor device Method of fabricating capacitor of semiconductor device

1998-06-17

2000-08-01

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438240, 438250, 438253, 438393, 438394, 438395, 438396, 438660, 438686, H01L 218234

Patent

active

060965932

ABSTRACT:
A method of fabricating a capacitor of a semiconductor device is disclosed including the step of forming a lower electrode layer on a semiconductor substrate, and a dielectric on the lower electrode layer, a part of the lower electrode layer, a part of the upper electrode layer adjacent to the dielectric of the capacitor including the upper electrode on the dielectric, or all of them containing oxygen.

REFERENCES:
patent: 4963701 (1990-10-01), Yasumoto et al.
patent: 5443030 (1995-08-01), Ishihara et al.
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5599424 (1997-02-01), Matsumoto et al.
patent: 5714402 (1998-02-01), Choi
patent: 5736422 (1998-04-01), Lee et al.
patent: 5790366 (1998-08-01), Desu et al.
patent: 5869901 (1999-02-01), Kusuyama
patent: 5932907 (1999-08-01), Grill et al.

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