Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-21
2006-11-21
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S302000, C438S525000
Reexamination Certificate
active
07138318
ABSTRACT:
A method for fabricating a body-tied SOI transistor with reduced body resistance is presented. During the wafer fabrication process, a semiconductor wafer is placed in an ion implantation device and oriented to a first position relative to a beam path of the ion implantation device in order to obtain a substantially non-orthogonal twist orientation between the beam path and the transistor gate edge. Following this orientation of the first position, an ion species is implanted into a first implantation region. The wafer is then rotated to a second substantially non-orthogonal twist orientation, where another ion implantation is conducted. This process continues in the same manner, such that further substantially non-orthogonal twists and ion implantations are conducted, until the desired number of implantation areas is created. Halo or pocket implants are an example of the type of implantations to which the technique may be applied.
REFERENCES:
patent: 5492847 (1996-02-01), Kao et al.
patent: 5811855 (1998-09-01), Tyson et al.
patent: 5821575 (1998-10-01), Mistry et al.
patent: 5874329 (1999-02-01), Neary et al.
patent: 5920093 (1999-07-01), Huang et al.
patent: 5973364 (1999-10-01), Kawanaka
patent: 5985726 (1999-11-01), Yu et al.
patent: 6005285 (1999-12-01), Gardner et al.
patent: 6191449 (2001-02-01), Shino
patent: 6194278 (2001-02-01), Rengarajan
patent: 6309933 (2001-10-01), Li et al.
patent: 6399989 (2002-06-01), Dockerty et al.
patent: 6448163 (2002-09-01), Holbrook et al.
patent: 6596554 (2003-07-01), Unnikrishnan
patent: 6630376 (2003-10-01), Krishnan et al.
patent: 6703280 (2004-03-01), Kim et al.
patent: 6794717 (2004-09-01), Matsumoto et al.
patent: 2002/0149058 (2002-10-01), Culp et al.
patent: 2003/0052347 (2003-03-01), Fung
patent: 497216 (1992-01-01), None
patent: 497216 (1992-01-01), None
patent: 535917 (1992-09-01), None
patent: 535917 (1992-09-01), None
patent: 905789 (1996-06-01), None
patent: 899793 (1998-06-01), None
patent: 899793 (1998-06-01), None
Qi Wen-Jie
Wu Donggang David
Advanced Micro Devices , Inc.
Duong Khanh
Smith Zandra V.
LandOfFree
Method of fabricating body-tied SOI transistor having halo... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating body-tied SOI transistor having halo..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating body-tied SOI transistor having halo... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3688230