Method of fabricating body-tied SOI transistor having halo...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S302000, C438S525000

Reexamination Certificate

active

07138318

ABSTRACT:
A method for fabricating a body-tied SOI transistor with reduced body resistance is presented. During the wafer fabrication process, a semiconductor wafer is placed in an ion implantation device and oriented to a first position relative to a beam path of the ion implantation device in order to obtain a substantially non-orthogonal twist orientation between the beam path and the transistor gate edge. Following this orientation of the first position, an ion species is implanted into a first implantation region. The wafer is then rotated to a second substantially non-orthogonal twist orientation, where another ion implantation is conducted. This process continues in the same manner, such that further substantially non-orthogonal twists and ion implantations are conducted, until the desired number of implantation areas is created. Halo or pocket implants are an example of the type of implantations to which the technique may be applied.

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