Method of fabricating bit line

Details Method of fabricating bit line Method of fabricating bit line

1998-05-21

2000-04-18

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

060514698

ABSTRACT:
A method of fabricating a bit line on a semiconductor substrate is provided. First, an oxide layer is formed and patterned on the substrate. An epitaxial layer is formed on the exposed substrate after patterning the oxide layer. A first spacer and a second spacer are sequentially formed on the sidewalls of a opening of the oxide layer. A trench is formed by partially removing the epitaxial layer and the substrate. A liner oxide layer is formed in the trench after removing the second spacer. A polysilicon layer as a conductive layer is formed in the trench after removing the first spacer. Then, a step of ion implantation and an annealing step are carried out. A buried bit line is formed after etching back the polysilicon layer.

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patent: 5547889 (1996-08-01), Kim
patent: 5684313 (1997-11-01), Kenny
patent: 5763306 (1998-06-01), Tsai
patent: 5981341 (1999-11-01), Kim et al.

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