Method of fabricating bit line

Details Method of fabricating bit line Method of fabricating bit line

1997-09-30

2000-01-25

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, H01L 218242

Patent

active

060177888

ABSTRACT:
A method of fabricating a bit line comprises first that a semiconductor substrate is provided. The substrate comprises source/drain regions and a semiconductor structure. Over the substrate, an oxide layer conformal to the semiconductor substrate and a BPSG layer are formed. A contact window is formed and exposes the source/drain regions in the substrate. A polysilicon layer is formed within the contact window and connects the source/drain regions. A titanium silicide (TiSi.sub.2) is formed and covers the polysilicon layer. A titanium nitride layer is formed and covers the titanium silicide layer. One of the characteristics of the invention is that a titanium silicide layer, a titanium nitride layer, and a polysilicon layer replaces the conventional tungsten silicide and the polysilicon layer to form a bit line. Therefore, the contact resistance of the bit line is reduced effectively. In addition, the titanium nitride layer can be used as a bottom anti-reflection layer to avoid the necking phenomenon while coating photoresist. Moreover, the titanium nitride layer also prevents the formation of cracking during the subsequent rapid thermal process.

REFERENCES:
patent: 5413950 (1995-05-01), Chen et al.
patent: 5776833 (1998-07-01), Chen et al.
patent: 5801425 (1998-09-01), Kuroi et al.

Affiliated with

Also associated with

Rating

Method of fabricating bit line does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating bit line, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating bit line will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2315382