Method of fabricating BiCMOS device

Details Method of fabricating BiCMOS device Method of fabricating BiCMOS device

1994-08-04

1997-08-26

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438207, 438217, 438919, H01L 21265

Patent

active

056610467

ABSTRACT:
A BiCMOS method and device. The BiCMOS device achieves improved performance through the use of wrap-around silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.

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