Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2011-04-12
2011-04-12
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S459000, C438S977000, C257S797000, C257SE23179
Reexamination Certificate
active
07923344
ABSTRACT:
A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark.
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Fu Shih-Chi
Hsieh Yuan-Chih
Shiau Gwo-Yuh
Shiu Feng-Jia
Yao Liang-Lung
Haynes and Boone LLP
Lee Hsien-Ming
Swanson Walter H
Taiwan Semiconductor Manufacturing Company , Ltd.
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