Method of fabricating back-illuminated imaging sensors

Details Method of fabricating back-illuminated imaging sensors Method of fabricating back-illuminated imaging sensors

2008-01-28

2009-11-24

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S311000, C257SE21177, C257SE21189, C257SE21229

Reexamination Certificate

active

07622342

ABSTRACT:
A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. A substrate which includes an insulator layer and an epitaxial layer substantially overlying the insulator layer is provided. At least one bond pad region is formed extending into the epitaxial layer to a surface of the insulator layer. At least one bond pad is fabricated at least partially overlying the at least one bond pad region. At least one imaging component is fabricated at least partially overlying and extending into the epitaxial layer. A passivation layer is fabricated substantially overlying the epitaxial layer, the at least one bond pad, and the at least one imaging component. A handle wafer is bonded to the passivation layer. The at least a portion of the insulator layer and at least a portion of the bond pad region is etched to expose at least a portion of the at least one bond pad.

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