Method of fabricating and curing spin-on-glass layers by electro

Details Method of fabricating and curing spin-on-glass layers by electro Method of fabricating and curing spin-on-glass layers by electro

1997-08-27

1999-11-23

Niebling, John F.

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

438474, 438471, 438477, 438782, 438783, 438798, 438800, 438624, 438631, 438697, H01L 21322

Patent

active

059899832

ABSTRACT:
An insulating layer may be fabricated on a microelectronic substrate by spinning a layer of spin-on-glass (SOG) on a microelectronic substrate and curing the SOG layer by irradiating the SOG layer with an electronic beam. Irradiating may take place simultaneously with heating the substrate to a temperature below about 500.degree. C. An underlying and/or overlying capping layer may also be provided. Alternatively, rather than irradiating the SOG layer, an overlying capping layer may be irradiated.

REFERENCES:
patent: 4983546 (1991-01-01), Hyun et al.
patent: 5118530 (1992-06-01), Hanneman et al.
patent: 5192697 (1993-03-01), Leong
patent: 5609925 (1997-03-01), Camilletti et al.
patent: 5759906 (1998-06-01), Lou

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