Method of fabricating analog capacitor using post-treatment...

Details Method of fabricating analog capacitor using post-treatment... Method of fabricating analog capacitor using post-treatment...

2007-10-30

2007-10-30

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S240000, C438S381000, C257SE27155

Reexamination Certificate

active

11063942

ABSTRACT:
There is provided a method of fabricating an analog capacitor using a post-treatment technique. The method includes forming a lower insulating layer on a semiconductor substrate. A bottom electrode is formed on the lower insulating layer, and a capacitor dielectric layer is formed on the bottom electrode. Then, the capacitor dielectric layer is post-treated in a deoxidizing medium. Then, the post-treated capacitor dielectric layer is post-treated in an oxidizing medium. A top electrode is formed on the post-treated capacitor dielectric layer. The analog capacitor fabricated through the post-treatment as above has a low VCC.

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patent: 2003-0054054 (2007-02-01), None

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