Method of fabricating an SOI device having a channel with variab

Details Method of fabricating an SOI device having a channel with variab Method of fabricating an SOI device having a channel with variab

1998-10-08

2000-07-11

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438311, 257324, 257347, H01L 21336

Patent

active

060872306

ABSTRACT:
A semiconductor device is provided by forming an insulating film on a supporting substrate and a semiconductor layer on the insulating film, forming an MOS semiconductor component having a source, a drain and a gate on the semiconductor layer, forming at least one of the source region of the semiconductor layer provided with the source and the drain region thereof provided with the drain to have greater thickness than a channel region of the semiconductor layer provided with a gate oxide film and a gate on the gate oxide film, and forming at least one of the source and the drain to be separated from the insulating film by the semiconductor layer of opposite conductivity type therefrom. A bulk layer of the same conductivity type as the semiconductor layer is provided in a thick region of the semiconductor layer. An MNOS or MONOS semiconductor non-volatile memory cell can be formed by replacing the gate oxide film with a memory gate insulating film consisting of a silicon oxide film and a silicon nitride film.

REFERENCES:
patent: 4247860 (1981-01-01), Tihanyi
patent: 5309007 (1994-05-01), Kelner et al.
patent: 5648671 (1997-07-01), Merchant
patent: 5684318 (1997-11-01), Ayres et al.
patent: 5969387 (1999-10-01), Letavic et al.
patent: 6023090 (2000-02-01), Letavic et al.

Affiliated with

Also associated with

Rating

Method of fabricating an SOI device having a channel with variab does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating an SOI device having a channel with variab, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an SOI device having a channel with variab will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-541770