Method of fabricating an oxide collar for a trench capacitor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S386000

Reexamination Certificate

active

07087485

ABSTRACT:
A method for fabricating patterned ceramic layers on areas of a relief structure, wherein the layers may be arranged essentially perpendicular to a top side of a substrate. In exemplary embodiments, a patterned ceramic layer forms an oxide collar for a trench capacitor. The oxide collar is produced by a trench firstly being filled with a resist in its lower section, and an oxide layer subsequently being produced on the uncovered areas of the substrate with the aid of a low temperature ALD method. By means of anisotropic etching, only those portions of the ceramic layer which are arranged at the perpendicular walls of the trench remain. The resist filling may subsequently be removed, for example, by means of an oxygen plasma.

REFERENCES:
patent: 6200873 (2001-03-01), Schrems et al.
patent: 6500707 (2002-12-01), Schrems
patent: 6689220 (2004-02-01), Nguyen
patent: 6777303 (2004-08-01), Schrems et al.
patent: 199 56 078 (2001-05-01), None
Klaus, J.W., et al., “Atomic Layer Deposition of SiO2Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions,” Surface Review and Letters, vol. 6, Nos. 3 & 4 (1999) pp. 435-448.
Klaus, J.W., et al., “Growth of SiO2at Room Temperature with the Use of Catalyzed Sequential Half-Reactions,” Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO (1997).

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