Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-08
2006-08-08
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S386000
Reexamination Certificate
active
07087485
ABSTRACT:
A method for fabricating patterned ceramic layers on areas of a relief structure, wherein the layers may be arranged essentially perpendicular to a top side of a substrate. In exemplary embodiments, a patterned ceramic layer forms an oxide collar for a trench capacitor. The oxide collar is produced by a trench firstly being filled with a resist in its lower section, and an oxide layer subsequently being produced on the uncovered areas of the substrate with the aid of a low temperature ALD method. By means of anisotropic etching, only those portions of the ceramic layer which are arranged at the perpendicular walls of the trench remain. The resist filling may subsequently be removed, for example, by means of an oxygen plasma.
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Klaus, J.W., et al., “Atomic Layer Deposition of SiO2Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions,” Surface Review and Letters, vol. 6, Nos. 3 & 4 (1999) pp. 435-448.
Klaus, J.W., et al., “Growth of SiO2at Room Temperature with the Use of Catalyzed Sequential Half-Reactions,” Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO (1997).
Gutsche Martin
Hecht Thomas
Seidl Harald
Infineon - Technologies AG
Kennedy Jennifer
Slater & Matsil L.L.P.
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