Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-29
1998-09-22
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438672, 438467, 438134, H01L 218234
Patent
active
058113304
ABSTRACT:
An overvoltage protection device, for inclusion within an integrated circuit, which comprises at least two conductive elements separated by a gas filled gap.
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Chang Joni
SGS-Thomson Microelectronics S.A.
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