Method of fabricating an isolation shallow trench

Details Method of fabricating an isolation shallow trench Method of fabricating an isolation shallow trench

2008-01-06

2009-08-04

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C257S301000, C257SE21396

Reexamination Certificate

active

07569451

ABSTRACT:
A method of fabricating an isolation shallow trench contains providing a substrate with at least a deep trench, forming a cap layer on the upper portion of the deep trench, forming a crust layer on a portion of the cap layer, defining a trench extending through the cap layer and the conductive layer, and forming an isolation layer in the shallow trench.

REFERENCES:
patent: 5346586 (1994-09-01), Keller
patent: 6258507 (2001-07-01), Ochiai et al.
patent: 6426253 (2002-07-01), Tews et al.

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