Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-29
2008-04-29
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S396000, C438S422000, C438S619000
Reexamination Certificate
active
11133267
ABSTRACT:
A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H2attack without damaging the function of an interlayer insulating film covering interconnections and the like to obtain a high capacitor performance. The position of a semiconductor substrate mounted on and secured to a substrate support plate in an HDP-CVD system is adjusted in the vertical direction, whereby a second HDP-CVD oxide film is deposited so that voids are formed between aluminum interconnections at lower positions than the height of the aluminum interconnections.
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Thomas Toniae M
Westerman, Hattori, Daniels & Adrian , LLP.
Wilczewski Mary
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