Method of fabricating an interconnection layer above a...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S253000, C438S396000, C438S422000, C438S619000

Reexamination Certificate

active

07364964

ABSTRACT:
A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H2attack without damaging the function of an interlayer insulating film covering interconnections and the like to obtain a high capacitor performance. The position of a semiconductor substrate mounted on and secured to a substrate support plate in an HDP-CVD system is adjusted in the vertical direction, whereby a second HDP-CVD oxide film is deposited so that voids are formed between aluminum interconnections at lower positions than the height of the aluminum interconnections.

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patent: 2000-022981 (2000-01-01), None
Korean Office Action dated May 8, 2006, issued in corresponding Korean Patent Application No. 2005-0025397.
Patent Abstracts of Japan, Publication No. 10012730 A, published on Jan. 16, 1998.
Patent Abstracts of Japan, Publication No. 09237834 A, published on Sep. 9, 1997.
Patent Abstracts of Japan, Publication No. 02151032 A, published on Jun. 11, 1990.

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