Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-06-18
1999-09-07
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438257, H01L 21336
Patent
active
059500867
ABSTRACT:
A semiconductor device is fabricated by the step of forming a first device isolation film in a peripheral circuit region by the use of a first pattern and a second device isolation film in a memory cell region by the use of a second pattern; forming a first conducting film processed by the use of a third pattern having a pattern-to-be-removed in a peripheral edge of the memory cell region; the step of forming an insulation film covering the memory cell region and processed by the use of a fourth pattern whose peripheral edge is positioned on the pattern-to-be-removed of the third pattern; and the step of forming a second conducting film processed by a fifth pattern.
REFERENCES:
patent: 5304503 (1994-04-01), Yoon et al.
patent: 5834351 (1998-11-01), Chang et al.
Higashitani Masaaki
Kajita Tatsuya
Komori Hideki
Kurihara Hideo
Takahashi Satoshi
Berezny Neal
Fujitsu Limited
Niebling John F.
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