Method of fabricating an analog semiconductor device having a sa

Details Method of fabricating an analog semiconductor device having a sa Method of fabricating an analog semiconductor device having a sa

1997-06-26

1998-07-14

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438250, 438382, 438253, H01L 218234

Patent

active

057803331

ABSTRACT:
An analog semiconductor device having a salicide(self-aligned silicide) layer and a method of fabricating the same are disclosed. An isolation layer is formed on a semiconductor substrate to define an active region, and a resistor is formed on the isolation layer. A capacitor insulating layer and dummy upper capacitor electrode are formed on a predetermined portion of the resistor, and a salicide layer is selectively formed on the dummy upper capacitor electrode and exposed portions of the resistor. The dummy upper capacitor electrode and one side of the exposed portion of the resistor are electrically connected to each other, to thereby form the analog semiconductor device.

REFERENCES:
patent: 5134088 (1992-07-01), Zetterlund
patent: 5597759 (1997-01-01), Yoshimori
patent: 5618749 (1997-04-01), Takahashi et al.

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