Method of fabricating a word line

Details Method of fabricating a word line Method of fabricating a word line

1996-10-07

2000-08-15

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438592, 438655, 438656, 257296, 257384, 257757, 257770, H01L 213205, H01L 2144, H01L 27108, H01L 2348

Patent

active

061036064

ABSTRACT:
On a substrate with a number rows of gates are formed. After a metal silicide layer is formed above the gates, a silicon-rich layer is formed. The silicon-rich layer is either a further metal silicide layer, with a higher silicon concentration or a pure silicon layer.

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