Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2007-11-13
2007-11-13
Chambliss, Alonzo (Department: 2814)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S612000, C438S614000, C438S617000, C438S648000, C257S763000, C257S765000, C257S770000
Reexamination Certificate
active
10676172
ABSTRACT:
A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting the bond pads to the Ni/Au pad metallization.
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Burrell Lloyd G.
Davis Charles R.
Goldblatt Ronald D.
Landers William F.
Mehta Sanjay C.
Chambliss Alonzo
Goodwin, Esq. Kerry B.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
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