Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2007-12-25
2007-12-25
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S458000, C438S285000, C257SE21182, C257SE21103, C257SE21618
Reexamination Certificate
active
10899270
ABSTRACT:
A method for making a SOI wafer with a strained silicon layer for increased electron and hole mobility is achieved. The method forms a porous silicon layer on a seed wafer. A H2anneal is used to form a smooth surface on the porous silicon. A strain free (relaxed) epitaxial SixGe1-xlayer is deposited and a bonding layer is formed. The seed wafer is then bonded to a handle wafer having an insulator on the surface. A spray etch is used to etch the porous Si layer resulting in a SOI handle wafer having portions of the porous Si layer on the relaxed SixGe1-x. The handle wafer is then annealed in H2to convert the porous Si to a smooth strained Si layer on the relaxed SiGe layer of the SOI wafer.
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Hu Chenming
Huang Chien-Chao
Lin Chun-Chieh
Yang Kuo-Nan
Yeo Yee-Chia
Haynes & Boone LLP
Maldonado Julio J.
Smith Matthew
Taiwan Semiconductor Manufacturing Company , Ltd.
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