Method of fabricating a trench gate MOSFET for maximizing...

Details Method of fabricating a trench gate MOSFET for maximizing... Method of fabricating a trench gate MOSFET for maximizing...

2008-12-28

2010-12-14

Dickey, Thomas L (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S331000

Reexamination Certificate

active

07851300

ABSTRACT:
A trench gate MOSFET and a fabrication method thereof includes forming a first epitaxial layer over a semiconductor substrate, and then forming a second epitaxial layer formed over the first epitaxial layer, and then forming a body region over the second conductive type second epitaxial layer, and then forming a circular cross-section in a portion of the body region by performing an ion implantation process on the body region such that a bottom area thereof has a circular cross-section.

REFERENCES:
patent: 2006/0281249 (2006-12-01), Yilmaz et al.

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