Method of fabricating a trench capacitor of a mixed mode...

Details Method of fabricating a trench capacitor of a mixed mode... Method of fabricating a trench capacitor of a mixed mode...

2006-04-04

2006-04-04

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S219000, C438S221000, C438S231000, C438S239000, C438S240000, C438S243000, C438S244000, C438S294000, C438S295000, C438S296000, C438S305000, C438S307000, C438S308000, C438S386000, C438S387000, C438S405000, C438S424000, C438S427000, C438S430000, C438S435000, C438S437000, C438S453000

Reexamination Certificate

active

07022565

ABSTRACT:
A method of fabricating a trench capacitor of a mixed mode integrated circuit includes forming shallow trench isolation regions for isolating active/passive devices on a semiconductor substrate. The lower electrode layer of the polysilicon layer, the dielectric layer, and the upper electrode layer are formed in sequence in a plurality of shallow trench isolation regions to form a trench capacitor. The present invention uses a trench capacitor to substitute for the 3-dimensional structure capacitor to overcome the disadvantages of the conventional capacitor, resulting in increasing the surface area of electrode and the capacitance.

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