Method of fabricating a trench capacitor DRAM device

Details Method of fabricating a trench capacitor DRAM device Method of fabricating a trench capacitor DRAM device

2007-09-18

2007-09-18

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C257SE21396

Reexamination Certificate

active

11160853

ABSTRACT:
The present invention discloses a STI-first process for making trench DRAM devices. According to the preferred embodiment, the etching recipe for etching the STI region in the memory array is completely compatible with the logic STI process.

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patent: 2006/0124982 (2006-06-01), Ho et al.
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