Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-11-21
1999-10-19
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438486, 438487, H01L 21336
Patent
active
059703270
ABSTRACT:
A semiconductor device comprising a substrate having thereon an amorphous silicon film fabricated by a reduced pressure chemical vapor deposition, characterized in that a thin film transistor is provided by using a crystalline silicon film obtained by effecting crystal growth in parallel with the surface of the substrate at the periphery of a region containing a selectively introduced metallic element, the region being obtained by selectively introducing a metallic element capable of accelerating the crystallization of the amorphous silicon film and heating the region thereafter.
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Funai Takashi
Makita Naoki
Takayama Toru
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski Mary
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