Method of fabricating a thin film transistor

Details Method of fabricating a thin film transistor Method of fabricating a thin film transistor

2008-10-01

2010-11-16

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S189000, C438S195000, C257S066000, C257S761000

Reexamination Certificate

active

07833850

ABSTRACT:
A method of fabricating a thin film transistor includes forming a gate electrode on a substrate, forming a semiconductor layer on the gate electrode, forming a source electrode on the semiconductor layer, forming a drain electrode on the semiconductor layer spaced apart from the source electrode, forming a copper layer pattern on the source electrode and the drain electrode, exposing the copper layer pattern on the source electrode and the drain electrode to a fluorine-containing process gas to form a copper fluoride layer pattern thereon, and patterning the semiconductor layer.

REFERENCES:
patent: 6218206 (2001-04-01), Inoue et al.
patent: 6872603 (2005-03-01), Doi
patent: 7615867 (2009-11-01), Kim et al.
patent: 2007/0295967 (2007-12-01), Harada et al.
patent: 2008/0108229 (2008-05-01), Tanaka et al.
patent: 10-2004-0042872 (2004-05-01), None
patent: 10-2006-0078010 (2006-07-01), None

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