Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-21
2008-12-16
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S224000, C257SE21427
Reexamination Certificate
active
07465621
ABSTRACT:
A first impurity region of a first type is implanted to have a first surface area on a substrate. A second impurity region of an opposite second type is implanted into a drain region of the transistor to have a second surface area in the first surface area of the first impurity region. A gate oxide is formed after implantation of the second impurity region between a source region and the drain region of the transistor, and the gate oxide is covered with a conductive material. A third impurity region of the opposite second type and a fourth impurity region of the first type are implanted into the source region of the transistor in the first surface area. A fifth impurity region of the opposite second type is implanted into the drain region of the transistor in the second surface area of the second impurity region.
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Burstein Andrew J.
You Budong
Zuniga Marco A.
Fish & Richardson P.C.
Lindsay, Jr. Walter L
Volterra Semiconductor Corporation
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