Method of fabricating a storage node

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation

Reexamination Certificate

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C257SE21328

Reexamination Certificate

active

07629274

ABSTRACT:
A storage node, a method of fabricating the same, a semiconductor memory device and a method of fabricating the same is provided. The method of fabricating a storage node may include forming a lower electrode, forming an irradiated data storage layer and forming an upper electrode.

REFERENCES:
patent: 5837593 (1998-11-01), Park et al.
patent: 6511856 (2003-01-01), Van Buskirk et al.
patent: 2003/0219941 (2003-11-01), Basceri et al.
patent: 2004/0048452 (2004-03-01), Sugawara et al.
patent: 2005/0079640 (2005-04-01), Potter

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