Method of fabricating a static random access memory

Details Method of fabricating a static random access memory Method of fabricating a static random access memory

1998-05-26

1999-08-24

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

148DIG163, 438384, 438382, 438585, 438591, H01L 218234, H01L 218244

Patent

active

059435666

ABSTRACT:
After the formation of a gate oxide layer, a polysilicon layer is formed right away. The polysilicon layer is used for patterning the gate oxide layer. The photolithography and etching processes of forming the buried contact window are combined with the step of removing the gate oxide layer at the periphery circuit region. Then, after the formation of the gate oxide layer at the memory cell region, one thermal oxidation process is performed to form the gate oxide layer at the periphery circuit region.

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