Method of fabricating a split gate flash memory device

Details Method of fabricating a split gate flash memory device Method of fabricating a split gate flash memory device

1998-03-02

1999-12-28

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438266, 438305, H01L 21336

Patent

active

060080892

ABSTRACT:
A method of fabricating a split gate flash memory. A substrate is provided for implantation with first ions to form a source region in the substrate. Second ions are implanted into the substrate to form a drain region in the substrate, wherein the source region is connected to the drain region. A part of the substrate is defined to form a number of trenches, wherein the trenches are located between the source region and the drain region. A tunneling oxide layer is formed along the profile of the trenches and on the surface of the substrate. The trenches are subsequently filled with a first polysilicon layer, wherein the depth of the first polysilicon layer is between that of the source region and that of the drain region in the substrate. An inter-dielectric layer is formed over the surface on the substrate and the first polysilicon layer, and a second polysilicon layer is formed on the substrate. The second polysilicon layer, the inter-dielectric layer, and the first poysilicon layer are defined to complete the fabricating of the flash memory device.

REFERENCES:
patent: 4272302 (1981-06-01), Jhabvala
patent: 4295924 (1981-10-01), Garnache et al.
patent: 5141886 (1992-08-01), Mori
patent: 5180680 (1993-01-01), Yang
patent: 5270257 (1993-12-01), Shin
patent: 5424231 (1995-06-01), Yang
patent: 5460987 (1995-10-01), Wen et al.
patent: 5514607 (1996-05-01), Taneda
patent: 5567635 (1996-10-01), Acovic et al.
patent: 5583066 (1996-12-01), Jung
patent: 5610091 (1997-03-01), Cho
patent: 5773343 (1998-06-01), Lee et al.
patent: 5854501 (1998-12-01), Kao
patent: 5874346 (1999-02-01), Fulford, Jr. et al.
patent: 5882972 (1999-03-01), Hong et al.

Affiliated with

Also associated with

Rating

Method of fabricating a split gate flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a split gate flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a split gate flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2381800