Method of fabricating a single electron transistor having...

Details Method of fabricating a single electron transistor having... Method of fabricating a single electron transistor having...

2006-07-24

2009-12-08

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S197000, C438S479000, C257SE39013, C257SE29322, C257SE49003

Reexamination Certificate

active

07629244

ABSTRACT:
A single electron transistor having a memory function and a fabrication method thereof are disclosed. In the single electron transistor, a first substrate and an insulation film are sequentially stacked, a second substrate is stacked on the insulation film and includes a source region, a channel region, and a drain region, a tunneling film is formed on the second substrate, at least two trap layers are formed on the tunneling film and are separated by an interval such that at least one quantum dot may be formed in a same interval in the channel region, and a gate electrode is formed to contact the at least two trap layers and the tunneling film between the at least two trap layers. Because the single electron transistor is simple and includes a single gate electrode, a fabricating process and an operational circuit thereof may be simplified, and power consumption may be reduced.

REFERENCES:
patent: 4544617 (1985-10-01), Mort et al.
patent: 6211013 (2001-04-01), Park et al.
patent: 06-196720 (1994-07-01), None

Affiliated with

Also associated with

Rating

Method of fabricating a single electron transistor having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a single electron transistor having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a single electron transistor having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4147063