Method of fabricating a silicon nitride stack

Details Method of fabricating a silicon nitride stack Method of fabricating a silicon nitride stack

2005-11-12

2008-12-16

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S311000, C438S680000, C257SE21170, C257SE21320, C257SE21293, C257SE21304, C257SE21546

Reexamination Certificate

active

07465669

ABSTRACT:
Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer including silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer including silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.

REFERENCES:
patent: 5122889 (1992-06-01), Kaneko et al.
patent: 5541434 (1996-07-01), Nicholls et al.
patent: 5670431 (1997-09-01), Huanga et al.
patent: 6501122 (2002-12-01), Chan et al.
patent: 6713127 (2004-03-01), Subramony et al.
patent: 6821825 (2004-11-01), Todd et al.
patent: 7294582 (2007-11-01), Haverkort et al.
patent: 2003/0124818 (2003-07-01), Luo et al.
patent: 2003/0232514 (2003-12-01), Kim et al.
patent: 2004/0061118 (2004-04-01), Yamazaki et al
patent: 2005/0109276 (2005-05-01), Iyer et al.
patent: 2006/0160341 (2006-07-01), Lin et al.
patent: 2006/0260341 (2006-11-01), Meyvis
Smith, J. W., et al., “Thermal Chemical Vapor Deposition of Bis(Tertiary-Butylamino) Silane-baed Silicon Nitride Thin Films”,Journal of the Electrochemical Society, 152 (4), (2005),G316-G321.
Tamaoki, Naoki , et al., “Low-Temperature Solution for Silicon Nitride LPCVD Using CI-Free Inorganic Trisilylamine”,in Chemical Vapor Deposition XVI and EUROCVD 14,vol. 1,Proceedings of the International Sumposium,M.D. Allendorf et al., Eds.; Proceedings Volumne 2003-08,(2003),693-700.

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