Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-12-30
2010-11-16
Dickey, Thomas L (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21635
Reexamination Certificate
active
07833849
ABSTRACT:
A method of fabricating semiconductor structure is provided in which at least one nFET device and a least one pFET device are formed on a semiconductor substrate. Each device region formed includes a dielectric stack that has a net dielectric constant equal to or greater than silicon dioxide. Gate stacks are provided on each of the dielectric stacks, wherein one of the gate stacks includes a metal gate electrode located atop a surface of a thinned polygate electrode.
REFERENCES:
patent: 6087225 (2000-07-01), Bronner et al.
patent: 6768179 (2004-07-01), Cho et al.
patent: 6991972 (2006-01-01), Lochtefeld et al.
patent: 2003/0080387 (2003-05-01), Cho et al.
patent: 2003/0176049 (2003-09-01), Hegde et al.
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2005/0064690 (2005-03-01), Amos et al.
patent: 2005/0082605 (2005-04-01), Akasaka
patent: 2005/0093104 (2005-05-01), Ieong et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
Chinese Patent Application Publication No. CN1225507A, published on Aug. 11, 1999, English-langugue abstract only.
Callegari Alessandro C.
Chen Tze-Chiang
Chudzik Michael P.
Doris Bruce B.
Kim Young-Hee
Dickey Thomas L
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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