Method of fabricating a semiconductor on insulator device...

Details Method of fabricating a semiconductor on insulator device... Method of fabricating a semiconductor on insulator device...

2011-04-26

2011-04-26

Arora, Ajay K (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27112, C438S149000, C438S479000, C438S517000

Reexamination Certificate

active

07932560

ABSTRACT:
A method of forming a substrate contact in a semiconductor device, comprising the steps of providing a semiconductor base substrate (2) having a buried oxide (BOX) layer (4) and a thin active semiconductor layer (103) on the BOX layer (4), forming a trench (104) in the active semiconductor layer (103) and the Box layer (4) to the semiconductor base substrate (2) below, and then depositing another active semiconductor (epitoxial) layer (6) over the remaining active semiconductor layer (103) and in the trench (104) to create the substrate contact. The trench (104) is etched at a location on the wafer corresponding to a scribe lane (106).

REFERENCES:
patent: 5194395 (1993-03-01), Wada
patent: 2002/0115244 (2002-08-01), Park et al.
patent: 2005/0176184 (2005-08-01), Okihara
patent: 2005/0236712 (2005-10-01), Tsao et al.
patent: 1193760 (2002-04-01), None
patent: 6151576 (2008-07-01), None

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