Method of fabricating a semiconductor nonvolatile storage device

Details Method of fabricating a semiconductor nonvolatile storage device Method of fabricating a semiconductor nonvolatile storage device

1998-02-05

2000-08-15

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 261, 438263, H01L 21336

Patent

active

061035726

ABSTRACT:
The method of fabricating a semiconductor nonvolatile storage device of this invention includes the steps of: forming an element region and an element isolation region on a semiconductor substrate; forming a memory gate insulation film by sequentially layering a tunnel oxide film, a silicon nitride film and a top oxide film on the device region; forming a memory gate electrode on the memory gate insulation film; forming heavily doped diffusion regions at element region portions self-aligned on opposite sides of the memory gate electrode; forming an interlayer insulator over the whole surface of the semiconductor substrate; forming contact holes in the interlayer insulator; forming interconnections passing through the contact holes and connecting with the memory gate electrode and the heavily doped diffusion regions; forming a passivating film over the whole surface of the semiconductor substrate including the interconnections by the plasma chemical vapor deposition process; forming openings for input/output terminals in the passivating film at positions thereof corresponding to the memory gate electrode and the heavily doped diffusion regions by plasma etching; and annealing the passivating film.

REFERENCES:
patent: 4538344 (1985-09-01), Okumura et al.
patent: 5464793 (1995-11-01), Roehl
patent: 5534460 (1996-07-01), Tseng et al.
patent: 5652156 (1997-07-01), Liao et al.
patent: 5804470 (1998-09-01), Wollesen

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