Method of fabricating a semiconductor memory device having bit l

Details Method of fabricating a semiconductor memory device having bit l Method of fabricating a semiconductor memory device having bit l

1997-11-05

2000-11-07

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

061436003

ABSTRACT:
Two n-channel enhancement type switching transistors are fabricated on an active area in such a manner as to share a common drain region, and gate electrodes are encapsulated in insulating wall structures defining a contact hole over the common drain region so as to allow a bit line to be directly held in contact through the contact hole with the common drain region.

REFERENCES:
patent: 5158905 (1992-10-01), Ahn
patent: 5387532 (1995-02-01), Hamamoto et al.
patent: 5396094 (1995-03-01), Matsuo
patent: 5405800 (1995-04-01), Ogawa et al.
patent: 5459341 (1995-10-01), Shono et al.
patent: 5476805 (1995-12-01), Woo et al.
patent: 5486712 (1996-01-01), Arima
patent: 5693553 (1997-12-01), Kashihara et al.

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