Method of fabricating a semiconductor integrated circuit device

Details Method of fabricating a semiconductor integrated circuit device Method of fabricating a semiconductor integrated circuit device

1998-04-07

2000-07-25

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438433, 438450, H01L 21762

Patent

active

06093591&

ABSTRACT:
In a Bi-CMOS integrated circuit device, to reduce a collector-substrate junction capacitance in an NPN transistor and to reduce the step of forming an anti-punch-through layer of the N-channel MOS transistor. Using as a mask a resist pattern having windows made on an element isolation LOCOS film 113a, 113c and P-type well layer 106, impurities are ion-implanted to form a channel stopper layer 115a, 115b for element isolation of a NPN transistor and an anti-punch-through layer 115c for a N-channel MOS transistor. Thus, a sufficient element isolation withstand voltage can be assured while avoiding an increase in the collector-substrate capacitance of the NPN transistor which is due to the transverse diffusion of the channel stopper layer when an epitaxial layer, well layer and LOCOS film are formed. In addition, without increasing the number of steps, the drain-source withstand voltage of the N-channel type MOS transistor and the short channel durability can be improved.

REFERENCES:
patent: 4536945 (1985-08-01), Gray et al.
patent: 4797372 (1989-01-01), Verret et al.
patent: 5134082 (1992-07-01), Kirchgessner
patent: 5405790 (1995-04-01), Rahim et al.
patent: 5439833 (1995-08-01), Hebert et al.
patent: 5506156 (1996-04-01), Watanabe et al.
patent: 5693555 (1997-12-01), Kim et al.
patent: 5960272 (1999-09-01), Ishimaru

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1335738