Method of fabricating a semiconductor integrated circuit...

Details Method of fabricating a semiconductor integrated circuit... Method of fabricating a semiconductor integrated circuit...

2005-02-01

2005-02-01

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C428S208000, C428S680000, C257S288000, C257SE21275

Reexamination Certificate

active

06849497

ABSTRACT:
In the case where holes are defined in BPSG films, respectively, lower electrodes are formed of polysilicon inside the holes, respectively, a nitride film is formed on top of the respective lower electrodes and one of the BPSG films, and the nitride film is subjected to healing oxidation in a wet atmosphere later in order to prevent oxidation of contact plugs and the lower electrodes, nitrogen is diffused into the upper surface of the BPSG film by ion implantation or boron dose in a layer in the vicinity of the surface of the BPSG film is lowered.

REFERENCES:
patent: 6127287 (2000-10-01), Hurley et al.
patent: 6159849 (2000-12-01), Kang et al.
patent: 6303496 (2001-10-01), Yu
patent: 6407002 (2002-06-01), Lin et al.
patent: 6528368 (2003-03-01), Park
patent: 6548853 (2003-04-01), Hwang et al.
patent: 6734108 (2004-05-01), Jin et al.
patent: 20020081864 (2002-06-01), Zheng et al.
patent: 02-016763 (1990-01-01), None
patent: 07-283213 (1995-10-01), None
patent: 07-297182 (1995-11-01), None
patent: 09064171 (1997-03-01), None
patent: 10-284693 (1998-10-01), None

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor integrated circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor integrated circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor integrated circuit... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3464810