Method of fabricating a semiconductor device including ion...

Details Method of fabricating a semiconductor device including ion... Method of fabricating a semiconductor device including ion...

2011-07-19

2011-07-19

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S527000

Reexamination Certificate

active

07981782

ABSTRACT:
A method of fabricating a semiconductor device includes forming a mask pattern for exposing a region of a semiconductor substrate. Dopant ions are implanted into the exposed region of the semiconductor substrate at a tilt angle of approximately 4.4° to 7°.

REFERENCES:
patent: 5936277 (1999-08-01), Takeuchi
patent: 5976937 (1999-11-01), Rodder et al.
patent: 6800529 (2004-10-01), Kim
patent: 2002/0055220 (2002-05-01), Soderbarg et al.
patent: 2002/0109105 (2002-08-01), Lin et al.
patent: 2003/0166324 (2003-09-01), Lin et al.
patent: 2005/0087782 (2005-04-01), Rhodes et al.
patent: 2005/0170595 (2005-08-01), Li et al.
patent: 2008/0020533 (2008-01-01), Thei et al.
patent: 2000-216108 (2000-08-01), None
patent: 2005-026644 (2005-01-01), None
patent: 1020050071028 (2005-07-01), None
patent: 1020060014399 (2006-11-01), None
patent: 1020060114399 (2006-11-01), None

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