Method of fabricating a semiconductor device including a contact

Details Method of fabricating a semiconductor device including a contact Method of fabricating a semiconductor device including a contact

1997-07-10

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438266, 438299, 438303, H01L 21336

Patent

active

061366587

ABSTRACT:
A method of fabricating a semiconductor device is provided which requires less distance allowance between gate electrodes and a contact hole, and which can therefore readily promote micro-fine patterning. A gate insulating film, conductive films to be used as material for gate electrodes, and a mask insulating film to be used as an etching mask are sequentially formed in stack on a surface of a semiconductor substrate. The mask insulating film and the conductive films are processed into a gate electrode pattern. An interlayer insulation film is deposited to fill a space between adjacent stacks of the mask insulating film and gate electrodes. The interlayer insulation film is selectively etched relative to the mask insulating film, thereby exposing sides of the mask insulating film. Side wall films are formed on the exposed portions of sides of the mask insulating film. The interlayer insulation film is selectively etched relative to the mask insulating film and side wall films, a contact hole being thereby formed.

REFERENCES:
patent: 5631179 (1997-05-01), Sung et al.
patent: 5856227 (1999-01-01), Yu et al.

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor device including a contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor device including a contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device including a contact will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1962998