Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2010-10-08
2011-11-22
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S486000, C438S197000, C257SE21103, C257SE21116
Reexamination Certificate
active
08062963
ABSTRACT:
A method is described which includes providing a semiconductor substrate and forming a trench in the semiconductor substrate. An epitaxy region is grown in the trench. An amorphous layer is deposited overlying the epitaxy region. The semiconductor substrate is then annealed. The anneal may convert a portion of the amorphous layer to crystalline material, as found in the epitaxy region. A chemical mechanical polish (CMP) is then performed, which may remove a portion of the amorphous layer which has not been converted. In an embodiment, the amorphous layer and epitaxy region are germanium and the semiconductor substrate is silicon. The formed crystalline region may be used to form a channel of a p-type device.
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Haynes and Boone LLP
Nguyen Ha Tran T
Scarlett Shaka
Taiwan Semiconductor Manufacturing Company , Ltd.
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