Method of fabricating a semiconductor device having an...

Details Method of fabricating a semiconductor device having an... Method of fabricating a semiconductor device having an...

2005-03-22

2005-03-22

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000

Reexamination Certificate

active

06869839

ABSTRACT:
A method of fabricating a semiconductor device having an L-shaped spacer comprises forming a gate pattern on a transistor region of a semiconductor substrate. A disposable spacer is formed on an insulating layer of sidewalls of the gate pattern. Deeply doped source/drain regions are formed aligned with the disposable spacer of the transistor region and in the semiconductor substrate of a resistor region. The disposable spacer and the first insulating layer are removed. A shallowly doped source/drain region is formed aligned with the sides of the gate pattern and adjacent to the deeply doped source/drain region of the transistor region. An L-shaped spacer is formed adjacent to the sidewalls of the gate pattern of the transistor region. A suicide formation protecting layer pattern is simultaneously formed on the resistor region. A metal silicide is formed on an upper surface of the gate electrode, the deeply doped source/drain regions.

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patent: 20030141540 (2003-07-01), Kusumi et al.
patent: 11186401 (1999-07-01), None

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