Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-09-02
2008-09-02
Kim, Vickie (Department: 4172)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S153000, C438S154000, C438S149000
Reexamination Certificate
active
11505335
ABSTRACT:
Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.
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Cho Eun-Suk
Choi Byung-Yong
Kim Suk-Pil
Kim Tae-Yong
Kim Won-Joo
Doan Nga
Harness & Dickey & Pierce P.L.C.
Kim Vickie
Samsung Electronics Co,. Ltd.
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