Method of fabricating a semiconductor device having a...

Details Method of fabricating a semiconductor device having a... Method of fabricating a semiconductor device having a...

2005-03-15

2005-03-15

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C438S592000, C438S769000, C438S785000, C438S791000

Reexamination Certificate

active

06867101

ABSTRACT:
A method of fabricating a semiconductor device, having a nitride/high-k material
itride gate dielectric stack with good thermal stability which does not diffuse into a silicon substrate, a polysilicon gate, or a polysilicon-germanium gate when experiencing subsequent high temperature processes, involving: (a) providing a substrate; (b) initiating formation of the nitride/high-k material
itride gate dielectric stack by depositing a first ultra-thin nitride film on the substrate; (c) depositing a high-k material, such as a thin metal film, on the first ultra-thin nitride film; (d) depositing a second ultra-thin nitride film on the high-k material, thereby forming a sandwich structure; (e) completing formation of the nitride/high-k material
itride gate dielectric stack from the sandwich structure; and (f) completing fabrication of the semiconductor device.

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